N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package ...
Description
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
TMP15N50/TMPF15N50 TMP15N50G/TMPF15N50G
VDSS = 550 V @Tjmax ID = 14A RDS(on) = 0.44 W(max) @ VGS= 10 V
D
G
S
Device TMP15N50 / TMPF15N50 TMP15N50G / TMPF15N50G
Package TO-220 / TO-220F TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking TMP15N50 / TMPF15N50 TMP15N50G / TMPF15N50G
Remark RoHS
Halogen Free
Symbol VDS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
TMP15N50(G) TMPF15N50(G) 500 ±30
14 14* 9.3 9.3* 56 56*
630 14 23.1 231 53 1.85 0.42 4.5 -55~150
300
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃
℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
TMP15N50(G) 0.54 62.5
May 2010 : Rev1
www.trinnotech.com
TMPF15N50(G) 2.34 62.5
Unit ℃/W ℃/W
1/5
TMP15N50/TMPF15N50 TMP15N50G/TMPF15N50G
Electrical Characteristics : TC=25℃, unless otherw...
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