Document
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
TMP13N50/TMPF13N50 TMP13N50G/TMPF13N50G
VDSS = 550 V @Tjmax ID = 13A RDS(on) = 0.48 W(max) @ VGS= 10 V
D
G
S
Device TMP13N50 / TMPF13N50 TMP13N50G / TMPF13N50G
Package TO-220 / TO-220F TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking TMP13N50 / TMPF13N50 TMP13N50G / TMPF13N50G
Remark RoHS
Halogen Free
Symbol VDS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
TMP13N50(G) TMPF13N50(G) 500 ±30
13 13* 8.2 8.2* 52 52*
563 13 18.3 183 52 1.46 0.41 4.5 -55~150
300
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃
℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
TMP13N50(G) 0.63 62.5
May 2010 : Rev1
www.trinnotech.com
TMPF13N50(G) 2.4 62.5
Unit ℃/W ℃/W
1/5
TMP13N50/TMPF13N50 TMP13N50G/TMPF13N50G
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA 500 --
--
V
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
--
IDSS
VDS = 400 V, TC = 125°C
--
-- 1 µA -- 10 µA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
-- 100 nA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
nA
ON Gate Threshold Voltage
Drain-Source On-Resistance Forward Transconductance (Note 4)
VGS(th) RDS(on)
gFS
VDS = VGS, ID = 250 µA VGS = 10 V, ID = 6.5 A VDS = 30 V, ID = 6.5 A
2 -- 4 V
-- 0.38 0.48 W
-- 14 --
S
DYNAMIC Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time (Note 4,5) Turn-Off Fall Time (Note 4,5) Total Gate Charge (Note 4,5) Gate-Source Charge (Note 4,5) Gate-Drain Charge (Note 4,5)
SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time (Note 4) Reverse Recovery Charge (Note 4)
Ciss Coss Crss
td(on) tr
td(off) tf Qg
Qgs Qgd
IS
ISM VSD trr Qrr
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
VDD = 250 V, ID = 13 A, RG = 25 Ω
VDS = 400V, ID = 13 A, VGS = 10 V
----VGS = 0 V, IS = 13 A VGS = 0 V, IS = 13 A dIF / dt = 100 A/µs
-- 1918 --- 187 --- 7.7 --
-- 53 --- 45 --- 156 --- 59 --- 36 --- 8.5 --- 8.7 --
pF pF pF
ns ns ns ns nC nC nC
-- -- 13 A
-- -- 52 A
-- -- 1.5 V
-- 325 --
ns
-- 3.3 -- µC
Note :
1. Repeated rating : Pulse width limited by safe operating area 2. L=6mH, I AS = 13A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃ 3 I SD ≤ 13A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃ 4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
May 2010 : Rev1
www.trinnotech.com
2/5
Drain-Source On-Resistance R [Ω ]
DS(ON)
TMP13N50/TMPF13N50 TMP13N50G/TMPF13N50G
Drain Current, I [A] D
40
Top V =15.0V
35
GS
10.0V
8.0V
30
7.0V 6.5V
6.0V
25 Bottom 5.0V
20
15
10
5 1. T = 25℃
C
2. 250μ s Pulse Test 0
0 10 20 30 40 50
Drain-Source Voltage, V [V] DS
Drain Current, I [A] D
V = 30V DS
250 μ s Pulse Test
10 150℃
25℃ 1
-55℃
0.1 2468
Gate-Source Voltage, V [V] GS
10
1.00
T = 25℃ J
0.75
0.50
0.25
V = 10V GS
V = 20V GS
0.00 0
5 10 15 20 25 30 35 40
Drain Current,I [A] D
Reverse Drain Current, I [A] DR
20
V = 0V GS
250μ s Pulse Test
15
10
5
150℃
25℃
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, V [V] SD
3500 3000 2500 2000 1500 1000
500 0 10-1
C = C + C (C = shorted) iss gs gd ds
C =C +C oss ds gd
C =C rss gd V =0V GS f = 1 MHz C iss
C oss
C rss
100 101
Drain-Source Voltage, V [V] DS
Gate-Source Voltage, V [V] GS
12 I = 13A
D
10
8
6
V = 100V DS
V = 250V DS V = 400V DS
4
2
0 0 5 10 15 20 25 30 35 40 45
Total Gate Charge, Q [nC] G
Capacitance [pF]
May 2010 : Rev1
www.trinnotech.com
3/5
TMP13N50/TMPF13N50 TMP13N50G/TMPF13N50G
Drain-Source Breakdown Voltage BV , (Normalized)
DSS
1.20 1.15 1.10
V =0V GS
I = 250 μ A
D
1.05
1.00
0.95
0.90
0.85
0.80 -80
-40
0 40 80
Junction Temperature,T [oC] J
120
160
Drain-Source On-Resistance R , (Normalized)
DS(ON)
3.0
V = 10 V GS
I = 6.5 A 2.5 D
2.0
1.5
1.0
0.5
0.0 -80
-40 0
40 80 120
Junction Temperature, T [oC] J
160
Drain Current, I [A] D
15.0 12.5 10.0
7.5 5.0 2.5 0.0
25
50 75 100 125
Case Temperature, T [℃] C.