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TMP13N50 Dataheets PDF



Part Number TMP13N50
Manufacturers TRinno
Logo TRinno
Description N-channel MOSFET
Datasheet TMP13N50 DatasheetTMP13N50 Datasheet (PDF)

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP13N50/TMPF13N50 TMP13N50G/TMPF13N50G VDSS = 550 V @Tjmax ID = 13A RDS(on) = 0.48 W(max) @ VGS= 10 V D G S Device TMP13N50 / TMPF13N50 TMP13N50G / TMPF13N50G Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 1.

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP13N50/TMPF13N50 TMP13N50G/TMPF13N50G VDSS = 550 V @Tjmax ID = 13A RDS(on) = 0.48 W(max) @ VGS= 10 V D G S Device TMP13N50 / TMPF13N50 TMP13N50G / TMPF13N50G Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP13N50 / TMPF13N50 TMP13N50G / TMPF13N50G Remark RoHS Halogen Free Symbol VDS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP13N50(G) TMPF13N50(G) 500 ±30 13 13* 8.2 8.2* 52 52* 563 13 18.3 183 52 1.46 0.41 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA TMP13N50(G) 0.63 62.5 May 2010 : Rev1 www.trinnotech.com TMPF13N50(G) 2.4 62.5 Unit ℃/W ℃/W 1/5 TMP13N50/TMPF13N50 TMP13N50G/TMPF13N50G Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 500 -- -- V Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V -- IDSS VDS = 400 V, TC = 125°C -- -- 1 µA -- 10 µA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 nA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 nA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) VGS(th) RDS(on) gFS VDS = VGS, ID = 250 µA VGS = 10 V, ID = 6.5 A VDS = 30 V, ID = 6.5 A 2 -- 4 V -- 0.38 0.48 W -- 14 -- S DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time (Note 4,5) Turn-Off Fall Time (Note 4,5) Total Gate Charge (Note 4,5) Gate-Source Charge (Note 4,5) Gate-Drain Charge (Note 4,5) SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time (Note 4) Reverse Recovery Charge (Note 4) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr VDS = 25 V, VGS = 0 V, f = 1.0 MHz VDD = 250 V, ID = 13 A, RG = 25 Ω VDS = 400V, ID = 13 A, VGS = 10 V ----VGS = 0 V, IS = 13 A VGS = 0 V, IS = 13 A dIF / dt = 100 A/µs -- 1918 --- 187 --- 7.7 -- -- 53 --- 45 --- 156 --- 59 --- 36 --- 8.5 --- 8.7 -- pF pF pF ns ns ns ns nC nC nC -- -- 13 A -- -- 52 A -- -- 1.5 V -- 325 -- ns -- 3.3 -- µC Note : 1. Repeated rating : Pulse width limited by safe operating area 2. L=6mH, I AS = 13A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃ 3 I SD ≤ 13A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃ 4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics May 2010 : Rev1 www.trinnotech.com 2/5 Drain-Source On-Resistance R [Ω ] DS(ON) TMP13N50/TMPF13N50 TMP13N50G/TMPF13N50G Drain Current, I [A] D 40 Top V =15.0V 35 GS 10.0V 8.0V 30 7.0V 6.5V 6.0V 25 Bottom 5.0V 20 15 10 5 1. T = 25℃ C 2. 250μ s Pulse Test 0 0 10 20 30 40 50 Drain-Source Voltage, V [V] DS Drain Current, I [A] D V = 30V DS 250 μ s Pulse Test 10 150℃ 25℃ 1 -55℃ 0.1 2468 Gate-Source Voltage, V [V] GS 10 1.00 T = 25℃ J 0.75 0.50 0.25 V = 10V GS V = 20V GS 0.00 0 5 10 15 20 25 30 35 40 Drain Current,I [A] D Reverse Drain Current, I [A] DR 20 V = 0V GS 250μ s Pulse Test 15 10 5 150℃ 25℃ 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Source-Drain Voltage, V [V] SD 3500 3000 2500 2000 1500 1000 500 0 10-1 C = C + C (C = shorted) iss gs gd ds C =C +C oss ds gd C =C rss gd V =0V GS f = 1 MHz C iss C oss C rss 100 101 Drain-Source Voltage, V [V] DS Gate-Source Voltage, V [V] GS 12 I = 13A D 10 8 6 V = 100V DS V = 250V DS V = 400V DS 4 2 0 0 5 10 15 20 25 30 35 40 45 Total Gate Charge, Q [nC] G Capacitance [pF] May 2010 : Rev1 www.trinnotech.com 3/5 TMP13N50/TMPF13N50 TMP13N50G/TMPF13N50G Drain-Source Breakdown Voltage BV , (Normalized) DSS 1.20 1.15 1.10 V =0V GS I = 250 μ A D 1.05 1.00 0.95 0.90 0.85 0.80 -80 -40 0 40 80 Junction Temperature,T [oC] J 120 160 Drain-Source On-Resistance R , (Normalized) DS(ON) 3.0 V = 10 V GS I = 6.5 A 2.5 D 2.0 1.5 1.0 0.5 0.0 -80 -40 0 40 80 120 Junction Temperature, T [oC] J 160 Drain Current, I [A] D 15.0 12.5 10.0 7.5 5.0 2.5 0.0 25 50 75 100 125 Case Temperature, T [℃] C.


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