TMP11N50G

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Fast reverse recovery TMP11N50/TMPF11N50 TMP11N50G/TMPF11N50G VDSS = 550 V @Tjmax ID = 11A RDS(ON) = 0.67 W(max) @ VGS= 10 V D G Device TMP11N50 / TMPF11N50 TMP11N50G / TMPF11N50G Package TO-220 / TO-220F TO-220 / TO-220F S Marking TMP11N50 / TMPF11N50 TMP11N50G / TMPF11N50G Remark RoHS Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient July 2010 : Rev1 Symbol RqJC RqJA www.trinnotech.com TMP11N50(G) TMPF11N50(G) 500 ±30 11 11 * 6 6* 44 44* 544 11 15.8 158 51.4 1.26 0.41 4.5 -55~150 300 TMP11N50(G) 0.79 62.5 TMPF11N50(G) 2.43 62.5 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Unit ℃/W ℃/W 1/5 TMP11N50/TMPF11N50 TMP11N50G/TMPF11N50G Electrical Characteristics : T...