DatasheetsPDF.com

CMS06 Dataheets PDF



Part Number CMS06
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
Datasheet CMS06 DatasheetCMS06 Datasheet (PDF)

CMS06 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CMS06 Switching Mode Power Supply Applications Portable Equipment Battery Applications · · · · Forward voltage: VFM = 0.37 V (max) Average forward current: IF (AV) = 2.0 A Repetitive peak reverse voltage: VRRM = 30 V Suitable for compact assembly due to small surface-mount package “M−FLATTM” (Toshiba package name) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Repetitive peak reverse voltage Average forward current Peak one c.

  CMS06   CMS06


Document
CMS06 TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type CMS06 Switching Mode Power Supply Applications Portable Equipment Battery Applications · · · · Forward voltage: VFM = 0.37 V (max) Average forward current: IF (AV) = 2.0 A Repetitive peak reverse voltage: VRRM = 30 V Suitable for compact assembly due to small surface-mount package “M−FLATTM” (Toshiba package name) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Repetitive peak reverse voltage Average forward current Peak one cycle surge forward current (non-repetitive) Junction temperature Storage temperature Symbol VRRM IF (AV) Rating 30 2.0 (Note) 40 (50 Hz) -40~125 -40~150 Unit V A IFSM Tj Tstg A °C °C JEDEC JEITA TOSHIBA ― ― 3-4E1A Note: Tℓ = 82.8°C: Rectangular waveform (a = 180°C), VR = 15 V Weight: 0.023 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol VFM (1) Peak forward voltage VFM (2) VFM (3) Repetitive peak reverse current Junction capacitance IRRM IRRM Cj Test Condition IFM = 0.5 A IFM = 1.0 A IFM = 2.0 A VRRM = 5 V VRRM = 30 V VR = 10 V, f = 1.0 MHz Device mounted on a ceramic board (soldering land: 2 mm ´ 2 mm) Thermal resistance Rth (j-a) Device mounted on a glass-epoxy board (soldering land: 6 mm ´ 6 mm) Thermal resistance Rth (j-ℓ) ¾ ¾ ¾ 16 °C/W Min ¾ ¾ ¾ ¾ ¾ ¾ ¾ Typ. 0.26 0.28 0.32 0.09 1.4 130 ¾ Max ¾ ¾ 0.37 ¾ 3.0 ¾ 60 °C/W ¾ ¾ 135 mA pF V Unit 1 2003-02-17 CMS06 Marking Following Indicates the Data of Manufacture Type code Lot No. Month of manufacture Year of manufacture January to December are denoted by letter A to L respectively. Last decimal digit of the year of manufacture 0 1 2 3 4 S6 5 6 7 8 9 Cathode mark Standard Soldering Pad Unit: mm 1.4 3.0 1.4 Handling Precaution Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to the other rectifier products. This current leakage and improper operating temperature or voltage may cause thermal runaway. Please take forward and reverse loss into consideration when you design. 2.1 2 2003-02-17 CMS06 iF - vF 100 1.0 0.9 PF (AV) - IF (AV) DC a = 180° a = 120° a = 60° Rectangular waveform (A) Average forward power dissipation PF (AV) (W) iF 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0° a 360° Conduction angle: a 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 Instantaneous forward current 10 Tj = 125°C 75°C 1 25°C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.0 0.0 Instantaneous forward voltage vF (V) Average forward current IF (AV) (A) Tℓ max - IF (AV) 140 1000 Cj - VR (typ.) f = 1 MHz Ta = 25°C Maximum allowable lead temperature Tℓ max (°C) 120 100 a = 180° 80 60 40 20 0 0.0 a = 120° DC Rectangular waveform a = 60° 0° a 360° IF (AV) Conduction angle: a VR = 15 V 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 Junction capacitance Cj 100 10 1 (pF) Average forward current IF (AV) (A) 10 100 Reverse voltage VR (V) rth (j-a) - t (°C/W) rth (j-a) 500 100 Device mounted on a glass-epoxy board Soldering land: 2.1 mm ´ 1.4 mm Device mounted on a glass-epoxy board Soldering land: 6.0 mm ´ 6.0 mm Transient thermal impedance 10 Device mounted on a ceramic board Soldering land: 2.0 mm ´ 2.0 mm 1 0.5 0.001 0.01 0.1 1 10 100 1000 Time t (s) 3 2003-02-17 CMS06 Surge forward current (non-repetitive) 50 1000 Ta = 25°C f = 50 Hz 40 100 Pulse test I R - Tj (typ.) (A) VR = 30 V VR = 20 V VR = 15 V VR = 3 V VR = 10 V VR = 5 V Peak surge forward current IFSM Reverse current IR (mA) 30 10 20 1 10 0.1 0 1 10 100 0.01 0 20 40 60 80 100 120 140 Number of cycles Junction temperature Tj (°C) PR (AV) - VR 10.0 Rectangular waveform 360° DC VR 6.0 Conduction angle: a Tj = 125°C 300° 240° 4.0 120° 60° 2.0 180° (typ.) Average reverse power dissipation PR (AV) (W) 8.0 0° 0.0 0 10 20 30 Reverse voltage VR (V) 4 2003-02-17 CMS06 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These .


CMS05 CMS06 CMS07


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)