B858

2SB857, 2SB858 Silicon PNP Triple Diffused www.DataSheet4U.com Application Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134 Outline TO-220AB 1 23 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) PC * 1 Tj Tstg 1. Base 2. Collector (Flange) 3. Emitter Ratings 2SB857 –70 –50 –5 –4 –8 40 150 –45 to +150 2SB858 –70 –60 –5 –4 –8 40 150 –45 to +150 Unit V V V A A W °C °C 2SB857, 2SB858 Electrical Characteristics (Ta = 25°C) www.DataSheet4U.com Item Symbol Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current ICBO DC current transfer ratio hFE1*1 hFE2 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Gain bandwidth product fT 2SB857 Min Typ –70 — –50 — –5 — —— 60 — 35 — —— —— — 15 Max — — — –1 320 — –1 –1 — 2SB858 Min Typ –70 — –60 — –5 — —— 60 — 35 — —— —— — 15 Notes: 1. The 2SB857 and 2SB858 are grouped by hFE1 as follows. 2. Pulse test Max — — — –1 320 — –1 –1 — Unit Test conditions V IC = –10 µA, IE = 0 V IC = –50 mA, RBE = ∞ V IE = –10 µA, IC = 0 µA VCB = –50 V, IE = 0 VCE = IC = –1 A*2 –4 V IC = –0.1 A*2 V IC = –2 A, IB = –0.2 A*2 V MHz VCE = –4...