MT3S107FS

MT3S107FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S107FS VCO BUFFER STAGE VHF-SHF Low Noise Amplifier Application FEATURES Low Noise Figure :NF=0.85dB (@f=2GHz) High Gain:|S21e|2= 13dB (@f=2GHz) Marking 3 42 2 1 +0.02 -0.04 0.6 ±0.05 0.35±0.05 0.15±0.05 Unit:mm 1.0±0.05 0.8±0.05 1 3 0.1±0.05 2 0.1±0.05 0.2±0.05 0.48 0.1±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC(Note 1) Tj Tstg Rating 10 4.5 1.5 20 10 100 150 −55~150 Unit V V V mA mA mW °C °C 1.BASE 2.EM IT TER 3.COLLECTOR fSM JEDEC JEITA TOSHIBA Weight: 0.0006 g 2-1E1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device mounted on a glass-epoxy PCB(1.0 cm2 x 1.0 mm (t)) 1 2007-11-01 Microwave Characteristi...