MT3S111TU

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Features Low-Noise Figure: NF=0.85 dB (typ.) (@ f=1 GHz) High Gain: |S21e|2=12.5 dB (typ.) (@ f=1 GHz) 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 1 23 2.0±0.1 0.65±0.05 0.166±0.05 0.7±0.05 Marking 3 R5 1. BASE 2. EMITTER 3. COLLECTOR 12 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit UFM JEDEC - JEITA - TOSHIBA 2-2U1B Weight: 6.6 mg (typ.) Collector-emitter voltage VCES 13 V Collector-emitter voltage VCEO 6 V Emitter-base voltage VEBO 0.6 V Collector-current IC 100 mA Base-current IB 10 mA Collector power dissipation PC(Note 1) 800 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t)) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate...