TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type
MT3S113
MT3S113
VHF-UHF Band Low-Noise, Low-Distortion ...
TOSHIBA
Transistor Silicon-Germanium
NPN Epitaxial Planar Type
MT3S113
MT3S113
VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications
Unit: mm
FEATURES
Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz)
Marking
R7
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
S-Mini
JEDEC
TO-236
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Collector-emitter voltage
VCES
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector-current
IC
Base-current
IB
Collector power dissipation
PC(Note1)
Junction temperature
Tj
Storage temperature range
Tstg
Note1:The device is mounted on a ceramic board
13 V
5.3 V
0.6 V
100 mA
10 mA
800 mW
150 °C
−55 to 150
°C
(25.4 mm x 25.4 mm x 0.8 mm (t))
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1 2009-12-01
Microwave Characteristics (Ta = 25°C)
MT3S113
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