MT3S113P

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES Low Noise Figure:NF=1.15dB(Typ.) (@ f=1GHz) High Gain:|S21e|2=10.5dB(Typ.) (@ f=1GHz) Marking R7 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Pw-Mini JEDEC - JEITA SC-62 TOSHIBA 2-5K1A Weight : 0.05 g ( typ.) Collector-emitter voltage VCES Collector-emitter voltage VCEO Emitter-base voltage VEBO Collector current IC Base current IB Collector power dissipation PC(Note1) Junction temperature Tj Storage temperature range Tstg Note1:The device is mounted on a ceramic board 13 V 5.3 V 0.6 V 100 mA 10 mA 1.6 W 150 °C −55 to 150 °C (25.4 mm x 25.4 mm x 0.8 mm (t)) Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-01 Microwave Characteristics (Ta = 25°C) MT3S113P Characteristics Symbol Test Con...