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MT3S11FS Dataheets PDF



Part Number MT3S11FS
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Epitaxial Planar Type Transistor
Datasheet MT3S11FS DatasheetMT3S11FS Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S11FS VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications MT3S11FS Unit: mm 0.2±0.05 0.6±0.05 0.35±0.05 0.15±0.05 • Superior performance in oscillator applications. • Superior noise characteristics :NF = 2.4 dB, |S21e|2 = 3.5 dB (f =2GHz) 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 -0.04 0.48 Absolute Maximum Ratings (Ta = 25°C) 0.1±0.05 Characteristic Collector- base voltage Collector- emitter voltage.

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S11FS VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications MT3S11FS Unit: mm 0.2±0.05 0.6±0.05 0.35±0.05 0.15±0.05 • Superior performance in oscillator applications. • Superior noise characteristics :NF = 2.4 dB, |S21e|2 = 3.5 dB (f =2GHz) 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 -0.04 0.48 Absolute Maximum Ratings (Ta = 25°C) 0.1±0.05 Characteristic Collector- base voltage Collector- emitter voltage Emitter- base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC(Note) Tj Tstg Rating 13 6 1 40 10 85 125 −55~125 Unit V V V mA mW mW °C °C 1.Base fSM 2.Emitter 3.Collector JEDEC ― JEITA ― TOSHIBA 2-1E1A Weight: 0.0006g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: 10 mm2 × 1.0 mm (t), mounted on a glass-epoxy printed circuit board. Marking 2 3 08 1 1 2007-11-01 Microwave Characteristics (Ta = 25°C) Characteristic Transition frequency Insertion gain Noise figure Symbol Condition fT ⎪S21e⎪2 (1) ⎪S21e⎪2 (2) NF VCE = 1 V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 3 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 5 mA, f = 2 GHz Electrical Characteristics (Ta = 25°C) Characteristic Symbol Condition Collector cutoff current Emitter cutoff current DC current gain Reverse transfer capacitance ICBO IEBO hFE Cre VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz(Note) Note: Cre is measured with a three-terminal method using a capacitance bridge. MT3S11FS Min Typ. Max Unit 4 6 ⎯ GHz ⎯ 3.5 ⎯ dB 4 6.5 ⎯ ⎯ 2.4 3.2 dB Min Typ. Max Unit ⎯ ⎯ 0.1 ⎯⎯ 1 100 ⎯ 160 ⎯ 0.65 0.9 μA μA ⎯ pF Caution This device is sensitive to electrostatic discharge. Ensure that tools and equipment are sufficiently grounded before handling. When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2007-11-01 MT3S11FS RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or .


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