MT3S12T

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S12T VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications Superior performance in oscillator applications. Superior noise characteristics : NF = 1.7 dB, |S21e|2 = 4.5 dB (f = 2 GHz) MT3S12T Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector- base voltage Collector- emitter voltage Emitter- base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 13 6 1 40 10 100 125 −55~125 Unit V V V mA mW mW °C °C TESM 1.Base 2.Emitter 3.Collector JEDEC ― JEITA ― TOSHIBA 2-1B1A Weight: 0.0022g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking 3 TJ 12 1 2007-11-01 Microwave Characteristics (Ta = 25°C) Characteristic Transition frequency Insertion gain Noise figure Symbol Condition fT ⎪S21e⎪2 (1) ⎪S2...