TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
VHF~UHF Band Oscillator and Amplifier Applications
• fT is high and current dependability is excellent.
• The Cre curve is flat.
:|S21e|2 = 4.5 dB (@ 2 V, 10 mA, 1 GHz)
:NF = 2.4 dB (@ 2 V, 10 mA, 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
VCBO 10 V
VCEO 5 V
VEBO 2 V
IC 60 mA
Collector power dissipation
IB 10 mW
PC 100 mW
Storage temperature range
Tj 125 °C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.0022g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).