MT3S16T

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S16T VHF~UHF Band Oscillator and Amplifier Applications fT is high and current dependability is excellent. The Cre curve is flat. :|S21e|2 = 4.5 dB (@ 2 V, 10 mA, 1 GHz) :NF = 2.4 dB (@ 2 V, 10 mA, 1 GHz) MT3S16T Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 10 V Collector-emitter voltage VCEO 5 V Emitter-base voltage VEBO 2 V Collector current IC 60 mA Base current Collector power dissipation IB 10 mW PC 100 mW TESM 1.Base 2.Emitter 3.Collector Junction temperature Storage temperature range Tj 125 °C Tstg −55~125 °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA TOSHIBA ― 2-1B1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 0.0022g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking 3 T4 12 1 2007-11-01 Microwave Characteristics (Ta = 25°C) Characteristic Transition frequency Insertion gain Noise figure Symbol Condition fT ⎪S21e⎪...