MT3S19R

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19R MT3S19R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications FEATURES Low Noise Figure:NF=1.5dB(Typ.) (@ f=1GHz) High Gain:|S21e|2=13dB(Typ.) (@ f=1GHz) Marking 3 1.8±0.1 0.05　M A 0.42+-00..0058 3 Unit: mm 0.17 +0.08 -0.07 2.4±0.1 1 0.95 2 0.95 2.9±0.2 A 0.8 -+00..0058 T6 12 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC(Note1) Tj Tstg Rating 12 6 2 80 10 320 150 −55 to 150 Unit V V V mA mA mW °C °C SOT23F JEDEC JEITA TOSHIBA Weight: 11 mg (typ.) － － － Note 1: The device is mounted on a FR4 board (20 mm x 25 mm x 1.55 mm (t)) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-08-18 Microw...