TMAN11N90Z

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification BVDSS 900V TMAN11N90Z N-channel MOSFET ID RDS(on)MAX 11A <0.95W Device TMAN11N90Z Package TO-3PN Marking TMAN11N90Z Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA April 2012 : Rev0 www.trinnotech.com TMAN11N90Z 900 ±30 11 8.5 44 360 11 41.6 416 3.3 4.5 -55~150 300 TMAN11N90Z 0.3 62.5 Remark RoHS Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Unit ℃/W ℃/W 1/5 TMAN11N90Z Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 900 -- -- V Zero Gate Voltage Drain Current VDS = 900 V, VGS = 0 V -- IDSS VDS = 720 V, TC = 125°C -- -- 1 µA -- 10 µA Forward...