TMAN9N90

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification TO-3PN BVDSS 900V TMAN9N90 N-channel MOSFET ID RDS(on) 9.5A < 1.4W D G Device TMAN9N90 Package TO-3PN Marking TMAN9N90 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMAN9N90 900 ±30 9.5 5.9 36 210 9.5 31.2 312 2.5 4.5 -55~150 300 Thermal Characteristics Parameter Maximum Thermal resistance, Junction to Case Typical Thermal resistance, Case to Sink(Typical) Maximum Thermal resistance, Junction to Ambient Symbol RqJC RqCS RqJA TMAN9N90 0.4 0.24 40 April 2014 : Rev 1.1 www.trinnotech.com S Remark RoHS Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Unit ℃/W ℃/W ℃/W 1/5 TMAN9N90 Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 900 -- -- V Zero Gate Voltage Drain Current VDS = 900 V, ...