N-channel MOSFET
Features Low gate charge Improved dv/dt capability Improved ESD performance RoHS compliant JEDEC Qualification...
Description
Features Low gate charge Improved dv/dt capability Improved ESD performance RoHS compliant JEDEC Qualification
Top view
TO-220F
BVDSS 900V
TMPF9N90AZ
N-channel MOSFET ID RDS(on) 9A <1.4W
Ordering Part Number TMPF9N90AZ
Package TO-220F
Marking TMPF9N90AZ
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
December 2014 : Rev 0.1
www.trinnotech.com
Value 900 ±30
9* 5.9 * 36* 454
9 29 89 0.71 4.5 -55~150 300
Value 1.4 62.5
Remark RoHS
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃ ℃
Unit ℃/W ℃/W 1/5
TMPF9N90AZ
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Unit
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA 900 --
--
V
Zero Gate Voltage Drain Current
VDS = 900 V, VGS = 0 V
--
IDSS
VDS = 720 V, TC = 125 ℃
-...
Similar Datasheet