TMAN7N90

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification TMA7N90/TMAN7N90 VDSS = 990 V @Tjmax ID = 7.2A RDS(on) = 1.9 W(max) @ VGS= 10 V TO-3P/TO3PN D G Device TMA7N90/TMAN7N90 Package TO-3P Marking TMA7N90/TMAN7N90 S Remark RoHS Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMA7N90/TMAN7N90 900 ±30 7.2 4.5 28.8 109 7.2 26.6 266 2.12 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction to Case Typical Thermal resistance, Case to Sink(Typical) Maximum Thermal resistance, Junction to Ambient Symbol RqJC RqCS RqJA TMA7N90 0.47 0.24 40 Unit ℃/W ℃/W ℃/W December 2011 : Rev1 www.trinnotech.com 1/6 TMA7N90/TMAN7N90 Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 900 ...