Document
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
TMP4N90(G)/TMPF4N90(G)
VDSS = 990 V @Tjmax ID = 4A RDS(ON) = 4.0 W(max) @ VGS= 10 V
D
G
Device TMP4N90 / TMPF4N90 TMP4N90G / TMPF4N90G
Package TO-220 / TO-220F TO-220 / TO-220F
S Marking TMP4N90 / TMPF4N90 TMP4N90G / TMPF4N90G
Remark RoHS
Halogen Free
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
August 2013 : Rev 1.0
Symbol RqJC RqJA
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TMP4N90(G)
TMPF4N90(G)
900
±30
4 4*
2.22
2.22 *
16 16*
17.8
4
12.3
123 38.7
0.98
0.30
4.5
-55~150
300
TMP4N90(G) 1.01 62.5
TMPF4N90(G) 3.23 62.5
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃ ℃
Unit ℃/W ℃/W
1/5
TMP4N90(G)/TMPF4N90(G)
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA 900 --
--
V
Zero Gate Voltage Drain Current
VDS = 900 V, VGS = 0 V
--
IDSS
VDS = 720 V, TC = 125°C
--
-- 10 µA -- 100 µA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
-- 100 nA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
nA
ON Gate Threshold Voltage
Drain-Source On-Resistance Forward Transconductance (Note 4)
VGS(th)
VDS = VGS, ID = 250 µA
2
--
4
V
RDS(on)
VGS = 10 V, ID = 2 A
-- 3.2 4.0 W
gFS
VDS = 30 V, ID = 2 A
-- 6 -- S
DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ciss Coss Crss
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
SWITCHING Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time (Note 4,5) Turn-Off Fall Time (Note 4,5) Total Gate Charge (Note 4,5) Gate-Source Charge (Note 4,5) Gate-Drain Charge (Note 4,5)
td(on) tr
td(off) tf Qg
Qgs Qgd
VDD = 450 V, ID = 4 A, RG = 25 Ω
VDS = 720V, ID = 4 A, VGS = 10 V
SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current
IS ISM
-----
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 4 A
Reverse Recovery Time (Note 4) Reverse Recovery Charge (Note 4)
trr VGS = 0 V, IS = 4 A Qrr dIF / dt = 100 A/µs
Note :
1. Repeated rating : Pulse width limited by safe operating area 2. L=2.1mH, I AS = 4A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃ 3 I SD ≤ 4A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃ 4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
-- 955 --- 80 --- 13 --
-- 49 --- 38 --- 146 --- 50 --- 25 --- 4.8 --- 10.2 --
pF pF pF
ns ns ns ns nC nC nC
-- -- 4 A
-- -- 16 A
-- -- 1.5 V
-- 487 --
ns
-- 2.8 -- µC
August 2013 : Rev 1.0
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2/5
Drain Current, I [A] D
10
Top V =15.0V GS 10.0V
8
8.0V 7.0V
6.5V
6.0V
Bottom 5.0V
6
4
2
1. T = 25℃ C
2. 250μ s Pulse Test 0
0 10 20 30 40 50
Drain-Source Voltage, V [V] DS
Drain Current, I [A] D
TMP4N90(G)/TMPF4N90(G)
V = 30V DS
250 μ s Pulse Test
10
150℃ 1
25℃
-55℃
0.1 0 2 4 6 8 10
Gate-Source Voltage, V [V] GS
Drain-Source On-Resistance R [Ω ]
DS(ON)
6
T = 25℃ J
5
4
V = 10V GS
3
V = 20V GS
2
1 02468
Drain Current,I [A] D
10
2000
1500
1000
500
0 10-1
C = C + C (C = shorted) iss gs gd ds
C =C +C oss ds gd
C =C rss gd V =0V GS f = 1 MHz C iss
C oss
C rss
100 101
Drain-Source Voltage, V [V] DS
Gate-Source Voltage, V [V] GS
Reverse Drain Current, I [A] DR
20
V = 0V GS
250μ s Pulse Test
15
10
5
150℃ 25℃
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Source-Drain Voltage, V [V] SD
12 I = 4A
D
10
8
6
4
2
0 05
V = 180V DS
V = 450V DS
V = 720V DS
10 15 20
Total Gate Charge, Q [nC] G
25
30
August 2013 : Rev 1.0
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3/5
Capacitance [pF]
Drain-Source Breakdown Voltage BV , (Normalized)
DSS
1.20 1.15 1.10
V =0V GS
I = 250 μ A
D
1.05
1.00
0.95
0.90
0.85
0.80 -80
-40
0 40 80
Junction Temperature,T [oC] J
120
160
Drain Current, I [A] D
5
4
3
2
1
0 25 50 75 100 125 150
Case Temperature, T [℃] C
Gate Threshold Voltage V , (Normalized)
TH
Drain-Source On-Resistance R , (Normalized)
DS(ON)
TMP4N90(G)/TMPF4N90(G)
3.5
V = 10 V GS I =2A
3.0 D
2.5
2.0
1.5
1.0
0.5
0.0 -80
-40
0 40 80
Junction Temperature, T [oC] J
120
160
1.5
1.0
0.5
V = 10 V GS
I = 250 A
D
0.0 -80
-40
0 40 80
Junctio.