TMPF3N90G

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP3N90/TMPF3N90 TMP3N90G/TMPF3N90G VDSS = 990 V @Tjmax ID = 2.5A RDS(ON) = 5.1 W(max) @ VGS= 10 V D G Device TMP3N90 / TMPF3N90 TMP3N90G / TMPF3N90G Package TO-220 / TO-220F TO-220 / TO-220F S Marking TMP3N90 / TMPF3N90 TMP3N90G / TMPF3N90G Remark RoHS Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient January 2012 : Rev0 Symbol RqJC RqJA www.trinnotech.com TMP3N90(G) TMPF3N90(G) 900 ±30 2.5 2.5 * 1.6 1.6 * 10 10* 16.6 2.5 9.4 94 32 0.75 0.25 4.5 -55~150 300 TMP3N90(G) 1.33 62.5 TMPF3N90(G) 3.9 62.5 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Unit ℃/W ℃/W 1/7 TMP3N90/TMPF3N90 TMP3N90G/TMPF3N90G Electrical Characteristics : TC=25℃, unless otherwise note...