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TMAN12N80Z

N-channel MOSFET

Description

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification BVDSS 800V TMAN12N80Z N-channel MOSFET ID RDS(on)MAX 12A <0.65W Device TMAN12N80Z Package TO-3PN Marking TMAN12N80Z Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Cur...

TRinno

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