N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification ...
Description
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification Improved ESD performance
BVDSS 800V
TMAN12N80AZ
N-channel MOSFET ID RDS(on) 12A < 0.65W
Device TMAN12N80AZ
Package TO-3PN
Marking TMAN12N80AZ
Remark RoHS
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol VDS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
October 2012 : Rev0
www.trinnotech.com
TMAN12N80AZ 800 ±30 12 10 48 313 12 41.6 416 3.3 4.5
-55~150 300
TMAN12N80AZ 0.3 62.5
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃ ℃
Unit ℃/W ℃/W
1/5
TMAN12N80AZ
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA 800 --
--
V
Zero Gate Voltage Drain Current
VDS = 800 V, VGS = 0 V
--
IDSS
VDS = 640 V, TC = 125...
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