N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package ...
Description
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
TMP8N80(G)/TMPF8N80(G)
BVDSS 800V
N-channel MOSFET ID RDS(on) 8A < 1.4W
Device TMP8N80 / TMPF8N80 TMP8N80G / TMPF8N80G
Package TO-220 / TO-220F TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking TMP8N80 / TMPF8N80 TMP8N80G / TMPF8N80G
Remark RoHS
Halogen Free
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
TMP8N80(G)
TMPF8N80G)
800
±30
8 8*
4.9 4.9 *
32 32 *
201
8
25
250 40.3
2 0.32
4.5
-55~150
300
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃
℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
February 2013 : Rev 1.0
www.trinnotech.com
TMP8N80(G) 0.5 62.5
TMPF8N80(G) 3.1 62.5
Unit ℃/W ℃/W
1/7
TMP8N80(G)/TMPF8N80(G)
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min T...
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