TMPF7N80A

Features  Low gate charge  Improved dv/dt capability  RoHS compliant  JEDEC Qualification Top view TO-220F BVDSS 800V TMPF7N80A N-channel MOSFET ID RDS(on) 7A <1.9W Ordering Part Number TMPF7N80A Package TO-220F Marking TMPF7N80A Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL Symbol RqJC RqJA December 2013 : Rev 0.0 www.trinnotech.com Value 800 ±30 7 4 28 227 7 15.6 50 0.4 4.5 -55~150 300 Value 2.5 62.5 Remark RoHS Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Unit ℃/W ℃/W 1/5 TMPF7N80A Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Unit OFF Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Forward Gate-Source Leakage Current Reverse Gate-Source Leakage Current BVDSS IDSS IGSSF IGSSR VGS = 0 V, ID = 250 µA VDS = 800 V, VGS = 0 V VDS =...