TMP4N80

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP4N80/TMPF4N80 TMP4N80G/TMPF4N80G VDSS = 880 V @Tjmax ID = 4A RDS(ON) = 3.0 W(max) @ VGS= 10 V D G Device TMP4N80 TMPF4N80G Package TO-220 TO-220F S Marking TMP4N80 Remark RoHS TMPF4N80G Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient January 2012 : Rev0 Symbol RqJC RqJA www.trinnotech.com TMP4N80(G) TMPF4N80(G) 800 ±30 4 4* 2.5 2.5 * 16 16* 76 4 12.3 123 38.6 0.98 0.31 4.5 -55~150 300 TMP4N80(G) 1.01 62.5 TMPF4N80(G) 3.23 62.5 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Unit ℃/W ℃/W 1/7 TMP4N80/TMPF4N80 TMP4N80G/TMPF4N80G Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drai...