Document
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
TMP4N80/TMPF4N80 TMP4N80G/TMPF4N80G
VDSS = 880 V @Tjmax ID = 4A RDS(ON) = 3.0 W(max) @ VGS= 10 V
D
G
Device TMP4N80 TMPF4N80G
Package TO-220 TO-220F
S
Marking TMP4N80
Remark RoHS
TMPF4N80G
Halogen Free
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
January 2012 : Rev0
Symbol RqJC RqJA
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TMP4N80(G)
TMPF4N80(G)
800 ±30
4 4* 2.5 2.5 *
16 16*
76 4
12.3 123 38.6
0.98 0.31
4.5 -55~150
300
TMP4N80(G) 1.01 62.5
TMPF4N80(G) 3.23 62.5
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃ ℃
Unit ℃/W ℃/W
1/7
TMP4N80/TMPF4N80 TMP4N80G/TMPF4N80G
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA 800 --
--
V
Zero Gate Voltage Drain Current
VDS = 800 V, VGS = 0 V
--
IDSS
VDS = 640 V, TC = 125°C
--
-- 10 µA -- 100 µA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
-- 100 nA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
nA
ON Gate Threshold Voltage
Drain-Source On-Resistance Forward Transconductance (Note 4)
VGS(th)
VDS = VGS, ID = 250 µA
2
--
4
V
RDS(on)
VGS = 10 V, ID = 2 A
-- 2.5 3.0 W
gFS
VDS = 30 V, ID = 2 A
-- 3.7 --
S
DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ciss Coss Crss
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
SWITCHING Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time (Note 4,5) Turn-Off Fall Time (Note 4,5) Total Gate Charge (Note 4,5) Gate-Source Charge (Note 4,5) Gate-Drain Charge (Note 4,5)
td(on) tr
td(off) tf Qg
Qgs Qgd
VDD = 400 V, ID = 4 A, RG = 25 Ω
VDS = 640V, ID = 4 A, VGS = 10 V
SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current
IS ISM
-----
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 4 A
Reverse Recovery Time (Note 4) Reverse Recovery Charge (Note 4)
trr VGS = 0 V, IS = 4 A Qrr dIF / dt = 100 A/µs
Note :
1. Repeated rating : Pulse width limited by safe operating area 2. L= 8.9mH, I AS = 4A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃ 3 I SD ≤ 4A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃ 4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
-- 1020 --- 77 --- 10.3 --
-- 22 --- 25 --- 84 --- 27 --- 21 --- 3.2 --- 7.8 --
pF pF pF
ns ns ns ns nC nC nC
-- -- 4 A
-- -- 16 A
-- -- 1.5 V
-- 404 --
ns
-- 2.8 -- µC
January 2012 : Rev0
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TMP4N80/TMPF4N80 TMP4N80G/TMPF4N80G
Drain Current, I [A] D
7
Top V =15.0V GS
6 10.0V 8.0V 7.0V
5 6.0V 5.0V 4.5V
4 Bottom 4.0V
3
2
1. T = 25℃ C
1 2. 250μs Pulse Test
0 0 5 10 15 20
Drain-Source Voltage, V [V] DS
5
T = 25℃ J
4
3
2
V = 10V GS
V = 20V GS
1 0 2 4 6 8 10
Drain Current,I [A] D
Reverse Drain Current, I [A] DR
Drain Current, I [A] D
V = 30V DS
250 μs Pulse Test
10
150℃ 1
25℃
-55℃
0.1 0 2 4 6 8 10
Gate-Source Voltage, V [V] GS
12
V = 0V GS
250μs Pulse Test
10
8
6 150℃ 25℃
4
2
0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Source-Drain Voltage, V [V] SD
Drain-Source On-Resistance R [Ω]
DS(ON)
Capacitance [pF]
1600 1200
800 400
0
C = C + C (C = shorted) iss gs gd ds
C =C +C oss ds gd
C =C rss gd
C iss
V =0V GS
f = 1 MHz
C oss
C rss
100 101
Drain-Source Voltage, V [V] DS
Gate-Source Voltage, V [V] GS
12 I = 4A
D
10
8
6
4
V = 160V DS
V = 400V DS
V = 640V DS
2
0 0 5 10 15 20 25
Total Gate Charge, Q [nC] G
January 2012 : Rev0
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3/7
Drain-Source Breakdown Voltage BV , (Normalized)
DSS
1.20 1.15 1.10
V =0V GS
I = 250 μA
D
1.05
1.00
0.95
0.90
0.85
0.80 -80
-40
0 40 80
Junction Temperature,T [oC] J
120
160
5
4
3
2
1
0 25 50 75 100 125 150
Case Temperature, T [℃] C
Gate Threshold Voltage V , (Normalized)
TH
Drain-Source On-Resistance R , (Normalized)
DS(ON)
TMP4N80/TMPF4N80 TMP4N80G/TMPF4N80G
3.0
V = 10 V GS I =2A D
2.5
2.0
1.5
1.0
0.5
0.0 -80
-40 0
40 80 120
Junction Temperature, T [oC] J
160
1.5
1.0
0.5
0.0 -80
V = 10 V GS
I = 250 A
D
-40
0 40 80
Junction Temperature, T [oC] J
120
160
Drain Current, I [A] D
Drain.