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TMP4N80G Dataheets PDF



Part Number TMP4N80G
Manufacturers TRinno
Logo TRinno
Description N-channel MOSFET
Datasheet TMP4N80G DatasheetTMP4N80G Datasheet (PDF)

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP4N80/TMPF4N80 TMP4N80G/TMPF4N80G VDSS = 880 V @Tjmax ID = 4A RDS(ON) = 3.0 W(max) @ VGS= 10 V D G Device TMP4N80 TMPF4N80G Package TO-220 TO-220F S Marking TMP4N80 Remark RoHS TMPF4N80G Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC.

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP4N80/TMPF4N80 TMP4N80G/TMPF4N80G VDSS = 880 V @Tjmax ID = 4A RDS(ON) = 3.0 W(max) @ VGS= 10 V D G Device TMP4N80 TMPF4N80G Package TO-220 TO-220F S Marking TMP4N80 Remark RoHS TMPF4N80G Halogen Free Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient January 2012 : Rev0 Symbol RqJC RqJA www.trinnotech.com TMP4N80(G) TMPF4N80(G) 800 ±30 4 4* 2.5 2.5 * 16 16* 76 4 12.3 123 38.6 0.98 0.31 4.5 -55~150 300 TMP4N80(G) 1.01 62.5 TMPF4N80(G) 3.23 62.5 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Unit ℃/W ℃/W 1/7 TMP4N80/TMPF4N80 TMP4N80G/TMPF4N80G Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 800 -- -- V Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V -- IDSS VDS = 640 V, TC = 125°C -- -- 10 µA -- 100 µA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 nA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 nA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) VGS(th) VDS = VGS, ID = 250 µA 2 -- 4 V RDS(on) VGS = 10 V, ID = 2 A -- 2.5 3.0 W gFS VDS = 30 V, ID = 2 A -- 3.7 -- S DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = 1.0 MHz SWITCHING Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time (Note 4,5) Turn-Off Fall Time (Note 4,5) Total Gate Charge (Note 4,5) Gate-Source Charge (Note 4,5) Gate-Drain Charge (Note 4,5) td(on) tr td(off) tf Qg Qgs Qgd VDD = 400 V, ID = 4 A, RG = 25 Ω VDS = 640V, ID = 4 A, VGS = 10 V SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current IS ISM ----- Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4 A Reverse Recovery Time (Note 4) Reverse Recovery Charge (Note 4) trr VGS = 0 V, IS = 4 A Qrr dIF / dt = 100 A/µs Note : 1. Repeated rating : Pulse width limited by safe operating area 2. L= 8.9mH, I AS = 4A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃ 3 I SD ≤ 4A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃ 4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics -- 1020 --- 77 --- 10.3 -- -- 22 --- 25 --- 84 --- 27 --- 21 --- 3.2 --- 7.8 -- pF pF pF ns ns ns ns nC nC nC -- -- 4 A -- -- 16 A -- -- 1.5 V -- 404 -- ns -- 2.8 -- µC January 2012 : Rev0 www.trinnotech.com 2/7 TMP4N80/TMPF4N80 TMP4N80G/TMPF4N80G Drain Current, I [A] D 7 Top V =15.0V GS 6 10.0V 8.0V 7.0V 5 6.0V 5.0V 4.5V 4 Bottom 4.0V 3 2 1. T = 25℃ C 1 2. 250μs Pulse Test 0 0 5 10 15 20 Drain-Source Voltage, V [V] DS 5 T = 25℃ J 4 3 2 V = 10V GS V = 20V GS 1 0 2 4 6 8 10 Drain Current,I [A] D Reverse Drain Current, I [A] DR Drain Current, I [A] D V = 30V DS 250 μs Pulse Test 10 150℃ 1 25℃ -55℃ 0.1 0 2 4 6 8 10 Gate-Source Voltage, V [V] GS 12 V = 0V GS 250μs Pulse Test 10 8 6 150℃ 25℃ 4 2 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Source-Drain Voltage, V [V] SD Drain-Source On-Resistance R [Ω] DS(ON) Capacitance [pF] 1600 1200 800 400 0 C = C + C (C = shorted) iss gs gd ds C =C +C oss ds gd C =C rss gd C iss V =0V GS f = 1 MHz C oss C rss 100 101 Drain-Source Voltage, V [V] DS Gate-Source Voltage, V [V] GS 12 I = 4A D 10 8 6 4 V = 160V DS V = 400V DS V = 640V DS 2 0 0 5 10 15 20 25 Total Gate Charge, Q [nC] G January 2012 : Rev0 www.trinnotech.com 3/7 Drain-Source Breakdown Voltage BV , (Normalized) DSS 1.20 1.15 1.10 V =0V GS I = 250 μA D 1.05 1.00 0.95 0.90 0.85 0.80 -80 -40 0 40 80 Junction Temperature,T [oC] J 120 160 5 4 3 2 1 0 25 50 75 100 125 150 Case Temperature, T [℃] C Gate Threshold Voltage V , (Normalized) TH Drain-Source On-Resistance R , (Normalized) DS(ON) TMP4N80/TMPF4N80 TMP4N80G/TMPF4N80G 3.0 V = 10 V GS I =2A D 2.5 2.0 1.5 1.0 0.5 0.0 -80 -40 0 40 80 120 Junction Temperature, T [oC] J 160 1.5 1.0 0.5 0.0 -80 V = 10 V GS I = 250  A D -40 0 40 80 Junction Temperature, T [oC] J 120 160 Drain Current, I [A] D Drain.


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