N-channel MOSFET
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package ...
Description
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
TMP4N80/TMPF4N80 TMP4N80G/TMPF4N80G
VDSS = 880 V @Tjmax ID = 4A RDS(ON) = 3.0 W(max) @ VGS= 10 V
D
G
Device TMP4N80 TMPF4N80G
Package TO-220 TO-220F
S
Marking TMP4N80
Remark RoHS
TMPF4N80G
Halogen Free
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
January 2012 : Rev0
Symbol RqJC RqJA
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TMP4N80(G)
TMPF4N80(G)
800 ±30
4 4* 2.5 2.5 *
16 16*
76 4
12.3 123 38.6
0.98 0.31
4.5 -55~150
300
TMP4N80(G) 1.01 62.5
TMPF4N80(G) 3.23 62.5
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃ ℃
Unit ℃/W ℃/W
1/7
TMP4N80/TMPF4N80 TMP4N80G/TMPF4N80G
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drai...
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