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TMPF6N70

TRinno

N-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package ...


TRinno

TMPF6N70

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Description
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP6N70(G)/TMPF6N70(G) BVDSS 700V N-channel MOSFET ID RDS(on) 5.0A <1.65W Device TMP6N70 / TMPF6N70 TMP6N70G / TMPF6N70G Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP6N70 / TMPF6N70 TMP6N70G / TMPF6N70G Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP6N70(G) TMPF6N70(G) 700 ±30 5 5* 3.14 3.14 20 20 188 5 12 120 39 0.96 0.31 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA May 2012 : Rev1 www.trinnotech.com TMP6N70(G) 1.04 62.5 TMPF6N70(G) 3.2 62.5 Unit ℃/W ℃/W 1/7 TMP6N70(G)/TMPF6N70(G) Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OF...




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