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TMD6N70 Datasheet, Equivalent, N-channel MOSFET.N-channel MOSFET N-channel MOSFET |
| Part | TMD6N70 |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification TMD6N70(G)/TMU6N70(G) VDSS = 770 V @Tjmax ID = 5A RDS(on) = 1.65 W(max) @ VGS= 10 V D-PAK I-PAK D G S Device TMD6N70/TMU6N70 TMD6N70G/TMU6N70G Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) P. |
| Manufacture | TRinno |
| Datasheet |
| Part | TMD6N70 |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification TMD6N70(G)/TMU6N70(G) VDSS = 770 V @Tjmax ID = 5A RDS(on) = 1.65 W(max) @ VGS= 10 V D-PAK I-PAK D G S Device TMD6N70/TMU6N70 TMD6N70G/TMU6N70G Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) P. |
| Manufacture | TRinno |
| Datasheet |
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