N-channel MOSFET. MDD1051 Datasheet

MDD1051 MOSFET. Datasheet pdf. Equivalent

MDD1051 Datasheet
Recommendation MDD1051 Datasheet
Part MDD1051
Description Single N-channel MOSFET
Feature MDD1051; MDD1051 – Single N-Channel Trench MOSFET 150V MDD1051 Single N-channel Trench MOSFET 150V, 28A, 46m.
Manufacture MagnaChip
Datasheet
Download MDD1051 Datasheet





MagnaChip MDD1051
MDD1051
Single N-channel Trench MOSFET 150V, 28A, 46mΩ
General Description
The MDD1051 uses advanced MagnaChips MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDD1051 is suitable device for Synchronous
Rectification For Server and general purpose applications.
Features
VDS = 150V
ID = 28A @VGS = 10V
RDS(ON) (MAX)
< 46.0mΩ @VGS = 10V
100% UIL Tested
100% Rg Tested
D
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
TC=25oC (Silicon Limited)
TC=100oC
TC=25oC
TC=100oC
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
Apr. 2014. Version 1.0
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
150
±20
28
18
110
70
28
50.0
-55~150
Unit
V
V
A
W
mJ
oC
Symbol
RθJA
RθJC
Rating
50
1.8
Unit
oC/W
MagnaChip Semiconductor Ltd.



MagnaChip MDD1051
Ordering Information
Part Number
MDD1051RH
Temp. Range
-55~150oC
Package
D-PAK
Packing
Tape & Reel
Rohs Status
Halogen Free
Electrical Characteristics (TJ =25oC)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Qg(10V)
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
VSD
trr
Qrr
Test Condition
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 120V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 20A
VDS = 10V, ID = 20A
VDS = 75V, ID = 20A,
VGS = 10V
VDS = 40V, VGS = 0V,
f = 1.0MHz
VGS = 10V, VDS = 75V,
ID = 20A , RG = 3.0Ω
IS = 20A, VGS = 0V
IF = 20A, dl/dt = 100A/μs
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25is silicon limited
2. EAS is tested at starting Tj = 25, L = 1.0mH, IAS =10.0A, VDD = 50V, VGS = 10V
Min Typ
Max Unit
150 -
1.2 2.2
-
3.2
V
- - 1.0
μA
- - ±0.1
-
37.0
46.0
- 30 - S
- 19.6
- 5.2
- 5.2
- 1270
- 30
- 385
- 15
- 10
- 20
-5
-
-
-
-
-
-
-
-
-
-
nC
pF
ns
- 0.80 1.3
- 73.0
-
- 245.0
-
V
ns
nC
Apr. 2014. Version 1.0
2 MagnaChip Semiconductor Ltd.



MagnaChip MDD1051
50
45
VGS = 10V
8.0V
40 6.0V
35
4.5V
30
25
4.0V
20
15
10 3.5V
5 3.0V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
2.4
2.2 Notes :
1. VGS = 10 V
2.0 2. ID = 10.0 A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0 25 50 75 100 125 150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
60
55
50
45
40 VGS = 10V
35
30
25
20
0 5 10 15 20 25 30 35 40 45 50
ID, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
200
180 Notes :
I = 10.0A
D
160
140
120
100
80
60 TJ = 25
40
20
0
2 3 4 5 6 7 8 9 10
VGS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
50
Notes :
45 V = 10V
DS
40
35
30
TJ=25
25
20
15
10
5
0
012345
VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
6
7
Apr. 2014. Version 1.0
3
Notes :
VGS = 0V
101
100
TJ=25
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, Source-Drain voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.





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