MDD1051

MDD1051 – Single N-Channel Trench MOSFET 150V MDD1051 Single N-channel Trench MOSFET 150V, 28A, 46mΩ ㄹ General Description The MDD1051 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1051 is suitable device for Synchronous Rectification For Server and general purpose applications. Features  VDS = 150V  ID = 28A @VGS = 10V  RDS(ON) (MAX) < 46.0mΩ @VGS = 10V  100% UIL Tested  100% Rg Tested D Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC (Silicon Limited) TC=100oC TC=25oC TC=100oC Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Apr. 2014. Version 1.0 1 G S Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating 150 ±20 28 18 110 70 28 50.0 -55~150 Unit V V A W mJ oC Symbol RθJA RθJC Rating 50 1.8 Unit oC/W MagnaChip Semiconductor Ltd. MDD1051 – Single N-Channel Trench MOSFET 150V Ordering Information Part Number MDD1051RH Temp. Range -55~150oC Package D-PAK Packing Tape & Reel Rohs Status Halogen Free Electrical Characteristics (TJ =25oC) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current Drain-Sour...