CMUT2222A

CMUT2222A ULTRAmini™ SURFACE MOUNT NPN SILICON TRANSISTOR Central DESCRIPTION: TM Semiconductor Corp. SOT-523 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance The CENTRAL SEMICONDUCTOR CMUT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini™ surface mount package, designed for small signal general purpose and switching applications. Marking Code is PC1. SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg ΘJA 75 40 6.0 600 250 -65 to +150 500 UNITS V V V mA mW °C °C/W UNITS nA µA nA nA V V V V V V V ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=60V 10 ICBO VCB=60V, TA=125°C 10 IEBO VEB=3.0V 10 ICEV VCE=60V, VEB=3.0V 10 BVCBO IC=10µA 75 BVCEO IC=10mA 40 BVEBO IE=10µA 6.0 VCE(SAT) IC=150mA, IB=15mA 0.3 VCE(SAT) IC=500mA, IB=50mA 1.0 VBE(SAT) IC=150mA, IB=15mA 0.6 1.2 VBE(SAT) IC=500mA, IB=50mA 2.0 hFE VCE=10V, IC=0.1mA 35 hFE VCE=10V, IC=1.0mA 50 hFE VCE=10V, IC=10mA 75 hFE VCE=10V, IC=150mA 100 300 hFE VCE=1.0V, IC=150mA 50 hFE VCE=10V, IC=500mA 40 R1 ( 2 -October 2001) Central fT Cob Cib hie hie hre hre hfe hfe hoe hoe rb’Cc NF td tr ts tf TM CMUT2222A ULTRAmini™ SURFACE MOUNT NPN SILICON TRANSISTOR MIN 300 8.0 25 8.0 1.25 8.0 4.0 300 375 35 200 150 4.0 10 25 225 60 MAX UNITS MHz pF pF kΩ kΩ x10-4 x10-4 Semiconduct...