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TMD6N65G Datasheet, Equivalent, N-channel MOSFET.N-channel MOSFET N-channel MOSFET |
| Part | TMD6N65G |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification TMD6N65G/TMU6N65G VDSS = 715 V @Tjmax ID = 5.5A RDS(on) = 1.6 W(max) @ VGS= 10 V D-PAK I-PAK D G S Device TMD6N65/TMU6N65 TMD6N65G/TMU6N65G Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Powe. |
| Manufacture | TRinno |
| Datasheet |
| Part | TMD6N65G |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification TMD6N65G/TMU6N65G VDSS = 715 V @Tjmax ID = 5.5A RDS(on) = 1.6 W(max) @ VGS= 10 V D-PAK I-PAK D G S Device TMD6N65/TMU6N65 TMD6N65G/TMU6N65G Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Powe. |
| Manufacture | TRinno |
| Datasheet |
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