Document
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
TMP4N65Z(G)/TMPF4N65Z(G)
BVDSS 650V
N-channel MOSFET ID RDS(on) 4A <2.4W
Device TMP4N65Z / TMPF4N65Z TMP4N65ZG / TMPF4N65ZG
Package TO-220 / TO-220F TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking TMP4N65Z / TMPF4N65Z TMP4N65ZG / TMPF4N65ZG
Remark RoHS
Halogen Free
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
TMP4N65Z(G) TMPF4N65Z(G) 650 ±30
4 4* 2.4 2.4 * 16 16 *
242 4
9.84 98.4 32.9 0.78 0.26
4.5 -55~150
300
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃
℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
TMP4N65Z(G) 1.27 62.5
May 2012 : Rev0
www.trinnotech.com
TMPF4N65Z(G) 3.8 62.5
Unit ℃/W ℃/W
1/7
TMP4N65Z(G)/TMPF4N65Z(G)
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA 650 --
--
V
Zero Gate Voltage Drain Current
VDS = 650 V, VGS = 0 V
--
IDSS
VDS = 520 V, TC = 125°C
--
-- 1 µA -- 10 µA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
-- 100 µA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
µA
ON Gate Threshold Voltage
Drain-Source On-Resistance Forward Transconductance (Note 4)
VGS(th)
VDS = VGS, ID = 250 µA
2
--
4
V
RDS(on)
VGS = 10 V, ID = 2.0 A
-- 2.0 2.4 W
gFS
VDS = 30 V, ID = 2.0 A
-- 6.2 --
S
DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ciss Coss Crss
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
-- 745 --- 67 --- 8.9 --
pF pF pF
SWITCHING Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time (Note 4,5) Turn-Off Fall Time (Note 4,5) Total Gate Charge (Note 4,5) Gate-Source Charge (Note 4,5) Gate-Drain Charge (Note 4,5)
td(on)
VDD = 325 V, ID = 4.0 A,
--
14
--
ns
tr
RG = 25 Ω
-- 22 -- ns
td(off)
-- 72 -- ns
tf -- 19 -- ns
Qg VDS = 520V, ID = 4.0 A, -- 16 -- nC
Qgs
VGS = 10 V
-- 2.5 -- nC
Qgd -- 6 -- nC
SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time (Note 4)
Reverse Recovery Charge (Note 4)
IS
ISM VSD trr Qrr
----
---VGS = 0 V, IS = 4.0 A VGS = 0 V, IS = 4.0 A dIF / dt = 100 A.