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TMPF4N65ZG Dataheets PDF



Part Number TMPF4N65ZG
Manufacturers TRinno
Logo TRinno
Description N-channel MOSFET
Datasheet TMPF4N65ZG DatasheetTMPF4N65ZG Datasheet (PDF)

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP4N65Z(G)/TMPF4N65Z(G) BVDSS 650V N-channel MOSFET ID RDS(on) 4A <2.4W Device TMP4N65Z / TMPF4N65Z TMP4N65ZG / TMPF4N65ZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy .

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP4N65Z(G)/TMPF4N65Z(G) BVDSS 650V N-channel MOSFET ID RDS(on) 4A <2.4W Device TMP4N65Z / TMPF4N65Z TMP4N65ZG / TMPF4N65ZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP4N65Z / TMPF4N65Z TMP4N65ZG / TMPF4N65ZG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP4N65Z(G) TMPF4N65Z(G) 650 ±30 4 4* 2.4 2.4 * 16 16 * 242 4 9.84 98.4 32.9 0.78 0.26 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA TMP4N65Z(G) 1.27 62.5 May 2012 : Rev0 www.trinnotech.com TMPF4N65Z(G) 3.8 62.5 Unit ℃/W ℃/W 1/7 TMP4N65Z(G)/TMPF4N65Z(G) Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 650 -- -- V Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V -- IDSS VDS = 520 V, TC = 125°C -- -- 1 µA -- 10 µA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 µA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 µA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) VGS(th) VDS = VGS, ID = 250 µA 2 -- 4 V RDS(on) VGS = 10 V, ID = 2.0 A -- 2.0 2.4 W gFS VDS = 30 V, ID = 2.0 A -- 6.2 -- S DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 745 --- 67 --- 8.9 -- pF pF pF SWITCHING Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time (Note 4,5) Turn-Off Fall Time (Note 4,5) Total Gate Charge (Note 4,5) Gate-Source Charge (Note 4,5) Gate-Drain Charge (Note 4,5) td(on) VDD = 325 V, ID = 4.0 A, -- 14 -- ns tr RG = 25 Ω -- 22 -- ns td(off) -- 72 -- ns tf -- 19 -- ns Qg VDS = 520V, ID = 4.0 A, -- 16 -- nC Qgs VGS = 10 V -- 2.5 -- nC Qgd -- 6 -- nC SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time (Note 4) Reverse Recovery Charge (Note 4) IS ISM VSD trr Qrr ---- ---VGS = 0 V, IS = 4.0 A VGS = 0 V, IS = 4.0 A dIF / dt = 100 A.


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