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TMD4N65Z Datasheet, Equivalent, N-channel MOSFET.N-channel MOSFET N-channel MOSFET |
| Part | TMD4N65Z |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK TMD4N65Z(G)/TMU4N65Z(G) BVDSS 650V N-channel MOSFET ID RDS(on) 4A <2.4W I-PAK Device TMD4N65Z / TMU4N65Z TMD4N65ZG / TMU4N65ZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Pow. |
| Manufacture | TRinno |
| Datasheet |
| Part | TMD4N65Z |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK TMD4N65Z(G)/TMU4N65Z(G) BVDSS 650V N-channel MOSFET ID RDS(on) 4A <2.4W I-PAK Device TMD4N65Z / TMU4N65Z TMD4N65ZG / TMU4N65ZG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Pow. |
| Manufacture | TRinno |
| Datasheet |
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