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TMU4N65AZG Datasheet, Equivalent, N-channel MOSFET.N-channel MOSFET N-channel MOSFET |
| Part | TMU4N65AZG |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance
D-PAK
TMD4N65AZ(G)/TMU4N65AZ(G)
BVDSS 650V
N-channel MOSFET
ID RDS(on)
4. 0A < 2. 4W I-PAK Device TMD4N65AZ / TMU4N65AZ TMD4N65AZG / TMU4N65AZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive A. |
| Manufacture | TRinno |
| Datasheet |
| Part | TMU4N65AZG |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance
D-PAK
TMD4N65AZ(G)/TMU4N65AZ(G)
BVDSS 650V
N-channel MOSFET
ID RDS(on)
4. 0A < 2. 4W I-PAK Device TMD4N65AZ / TMU4N65AZ TMD4N65AZG / TMU4N65AZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive A. |
| Manufacture | TRinno |
| Datasheet |
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