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TMAN16N60 Datasheet, Equivalent, N-channel MOSFET.N-channel MOSFET N-channel MOSFET |
| Part | TMAN16N60 |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification
BVDSS 600V
TMAN16N60
N-channel MOSFET ID RDS(on) 16A < 0. 47W Device TMAN16N60 Package TO-3PN Marking TMAN16N60 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operati. |
| Manufacture | TRinno |
| Datasheet |
| Part | TMAN16N60 |
|---|---|
| Description | N-channel MOSFET |
| Feature | Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification
BVDSS 600V
TMAN16N60
N-channel MOSFET ID RDS(on) 16A < 0. 47W Device TMAN16N60 Package TO-3PN Marking TMAN16N60 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operati. |
| Manufacture | TRinno |
| Datasheet |
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