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TMPF12N60AG Dataheets PDF



Part Number TMPF12N60AG
Manufacturers TRinno
Logo TRinno
Description N-channel MOSFET
Datasheet TMPF12N60AG DatasheetTMPF12N60AG Datasheet (PDF)

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP12N60A(G)/TMPF12N60A(G) BVDSS 600V N-channel MOSFET ID RDS(on) 12A < 0.65W D G S Device TMP12N60A / TMPF12N60A TMP12N60AG / TMPF12N60AG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse .

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification TMP12N60A(G)/TMPF12N60A(G) BVDSS 600V N-channel MOSFET ID RDS(on) 12A < 0.65W D G S Device TMP12N60A / TMPF12N60A TMP12N60AG / TMPF12N60AG Package TO-220 / TO-220F TO-220 / TO-220F Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds * Limited only by maximum junction temperature Marking TMP12N60A / TMPF12N60A TMP12N60AG / TMPF12N60AG Remark RoHS Halogen Free Symbol VDSS VGS ID IDM EAS IAR EAR PD dv/dt TJ, TSTG TL TMP12N60A(G) TMPF12N60A(G) 600 ±30 12 12 * 7.2 7.2 * 48 48 * 825 12 23.1 231 53.4 1.85 0.42 4.5 -55~150 300 Unit V V A A A mJ A mJ W W/℃ V/ns ℃ ℃ Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol RqJC RqJA TMP12N60A(G) 0.54 62.5 September 2012 : Rev0 www.trinnotech.com TMPF12N60A(G) 2.34 62.5 Unit ℃/W ℃/W 1/7 TMP12N60A(G)/TMPF12N60A(G) Electrical Characteristics : TC=25℃, unless otherwise noted Parameter Symbol Test condition Min Typ Max Units OFF Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 600 -- -- V Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- IDSS VDS = 480 V, TC = 125°C -- -- 1 µA -- 10 µA Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 nA Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 nA ON Gate Threshold Voltage Drain-Source On-Resistance Forward Transconductance (Note 4) VGS(th) RDS(on) gFS VDS = VGS, ID = 250 µA VGS = 10 V, ID = 6.0 A VDS = 30 V, ID = 6.0 A 3 -- 5 V -- 0.52 0.65 W -- 12 -- S DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = 1.0 MHz SWITCHING Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time (Note 4,5) Turn-Off Fall Time (Note 4,5) Total Gate Charge (Note 4,5) Gate-Source Charge (Note 4,5) Gate-Drain Charge (Note 4,5) td(on) tr td(off) tf Qg Qgs Qgd VDD = 300 V, ID = 12 A, RG = 25 Ω VDS = 480 V, ID = 12 A, VGS = 10 V SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time (Note 4) Reverse Recovery Charge (Note 4) IS ISM VSD trr Qrr ---- ---VGS = 0 V, IS = 12 A VGS = 0 V, IS = 12 A dIF / dt = 100 A/µs Note : 1. Repeated rating : Pulse width limited by safe operating area 2. L=10.5mH, I AS = 12A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃ 3 I SD ≤ 12A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃ 4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics -- 1890 --- 182 --- 17 -- -- 42 --- 54 --- 121 --- 37 --- 40 --- 9 --- 18 -- pF pF pF ns ns ns ns nC nC nC -- -- 12 A -- -- 48 A -- -- 1.5 V -- 367 -- ns -- 4.2 -- µC September 2012 : Rev0 www.trinnotech.com 2/7 Drain Current, I [A] D TMP12N60A(G)/TMPF12N60A(G) 30 Top V =15.0V GS 25 10.0V 9.0V 8.0V 7.0V 20 6.0V Bottom 5.5V 15 10 5 1. T = 25℃ C 2. 250μs Pulse Test 0 0 5 10 15 20 Drain-Source Voltage, V [V] DS Drain Current, I [A] D V = 30V DS 250 μs Pulse Test 10 150℃ 25℃ 1 -55℃ 0.1 2468 Gate-Source Voltage, V [V] GS 10 1.0 T = 25℃ J 0.8 V = 10V GS 0.6 V = 20V GS 0.4 0.2 0 10 20 30 Drain Current,I [A] D 50 V = 0V GS 250μs Pulse Test 40 Reverse Drain Current, I [A] DR 30 150℃ 25℃ 20 10 0 40 0.0 0.5 1.0 1.5 Source-Drain Voltage, V [V] SD 2.0 Drain-Source On-Resistance R [Ω] DS(ON) Capacitance [pF] Gate-Source Voltage, V [V] GS 4000 3000 2000 1000 C = C + C (C = shorted) iss gs gd ds C =C +C oss ds gd C =C rss gd V =0V GS f = 1 MHz C iss C oss C rss 12 I = 12A D 10 8 6 4 2 V = 300V DS V = 120V DS V = 480V DS 0 10-1 100 101 Drain-Source Voltage, V [V] DS September 2012 : Rev0 0 0 www.trinnotech.com 10 20 30 40 Total Gate Charge, Q [nC] G 50 3/7 TMP12N60A(G)/TMPF12N60A(G) Drain-Source Breakdown Voltage BV , (Normalized) DSS 1.20 1.15 1.10 V =0V GS I = 250 μA D 1.05 1.00 0.95 0.90 0.85 0.80 -80 -40 0 40 80 Junction Temperature,T [oC] J 120 3.0 V = 10 V GS I =6A 2.5 D Drain-Source On-Resistance R , (Normalized) DS(ON) 2.0 1.5 1.0 0.5 0.0 160 -80 -40 0 40 80 120 Junction Temperature, T [oC] J 160 Drain Current, I [A] D 12 1.5 10 Gate Threshold Voltage V , (Normalized) TH 8 1.0 6 4 0.5 2 V =V DS GS I = 250  A D 0 0.0 25 50 75 100 125 150 -80 -40 0 40 80 120 160 Case Tem.


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