Document
Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification
TMP10N60A(G)/TMPF10N60A(G)
BVDSS 600V
N-channel MOSFET ID RDS(on) 10A <0.7W
D
G S
Device TMP10N60A / TMPF10N60A TMP10N60AG / TMPF10N60AG
Package TO-220 / TO-220F TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking TMP10N60A / TMPF10N60A TMP10N60AG / TMPF10N60AG
Remark RoHS
Halogen Free
Symbol VDSS VGS
ID
IDM EAS IAR EAR
PD
dv/dt TJ, TSTG
TL
TMP10N60A(G) TMPF10N60AG) 600 ±30
10 10 * 6.48 6.48 * 40 40 *
660 10 19.8 198 52 1.58 0.41 4.5 -55~150
300
Unit V V A A A mJ A mJ W
W/℃ V/ns
℃
℃
Thermal Characteristics
Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient
Symbol RqJC RqJA
TMP10N60A(G) 0.63 62.5
October 2012 : Rev0
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TMPF10N60A(G) 2.4 62.5
Unit ℃/W ℃/W
1/7
TMP10N60A(G)/TMPF10N60A(G)
Electrical Characteristics : TC=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min Typ Max Units
OFF
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 µA 600 --
--
V
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
--
IDSS
VDS = 480 V, TC = 125°C
--
-- 1 µA -- 10 µA
Forward Gate-Source Leakage Current
IGSSF
VGS = 30 V, VDS = 0 V
--
-- 100 nA
Reverse Gate-Source Leakage Current
IGSSR
VGS = -30 V, VDS = 0 V
--
--
-100
nA
ON Gate Threshold Voltage
Drain-Source On-Resistance Forward Transconductance (Note 4)
VGS(th) RDS(on)
gFS
VDS = VGS, ID = 250 µA VGS = 10 V, ID = 5.0 A VDS = 30 V, ID = 5.0 A
3 -- 5 -- 0.58 0.7 -- 14 --
V W S
DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ciss Coss Crss
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
SWITCHING Turn-On Delay Time (Note 4,5) Turn-On Rise Time (Note 4,5) Turn-Off Delay Time (Note 4,5) Turn-Off Fall Time (Note 4,5) Total Gate Charge (Note 4,5) Gate-Source Charge (Note 4,5) Gate-Drain Charge (Note 4,5)
td(on) tr
td(off) tf Qg
Qgs Qgd
VDD = 300 V, ID = 10 A, RG = 25 Ω
VDS = 480 V, ID = 10 A, VGS = 10 V
SOURCE DRAIN DIODE Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time (Note 4)
Reverse Recovery Charge (Note 4)
IS
ISM VSD trr Qrr
----
---VGS = 0 V, IS = 10A VGS = 0 V, IS = 10 A dIF / dt = 100 A/µs
Note :
1. Repeated rating : Pulse width limited by safe operating area 2. L=12.1mH, I AS = 10A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃ 3 I SD ≤ 10A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃ 4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
-- 1660 --- 165 --- 17 --
-- 38 --- 47 --- 103 --- 32 --- 35 --- 8 --- 16 --
pF pF pF
ns ns ns ns nC nC nC
-- -- 10 A
-- -- 40 A
-- -- 1.5 V
-- 373 --
ns
-- 3.6 -- µC
October 2012 : Rev0
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Drain Current, I [A] D
TMP10N60A(G)/TMPF10N60A(G)
30
Top V =15.0V GS
25 10.0V 9.0V 8.0V 7.0V
20 6.0V Bottom 5.5V
15
10
5 1. T = 25℃
C
2. 250μs Pulse Test 0
0 5 10 15 20
Drain-Source Voltage, V [V] DS
Drain Current, I [A] D
V = 30V DS
250 μs Pulse Test
10 150℃
25℃
1
-55℃
0.1 2468
Gate-Source Voltage, V [V] GS
10
1.4
T = 25℃ J
1.2
1.0
0.8
0.6
0.4
0.2 0
5
V = 10V GS
V = 20V GS
10 15 20 25 30
Drain Current,I [A] D
Reverse Drain Current, I [A] DR
40
V = 0V GS
250μs Pulse Test
30
20
150℃
25℃
10
0 0.0 0.5 1.0 1.5
Source-Drain Voltage, V [V] SD
2.0
Drain-Source On-Resistance R [Ω]
DS(ON)
Capacitance [pF]
Gate-Source Voltage, V [V] GS
3000 2000 1000
C = C + C (C = shorted) iss gs gd ds
C =C +C oss ds gd
C =C rss gd
C iss
V =0V GS
f = 1 MHz
C oss
C rss
12 I = 10A
D
10
8
6
4
2
V = 300V DS
V = 120V DS
V = 480V DS
0 10-1 100 101
Drain-Source Voltage, V [V] DS
October 2012 : Rev0
0 0
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10 20 30
Total Gate Charge, Q [nC] G
40
3/7
Drain-Source Breakdown Voltage BV , (Normalized)
DSS
TMP10N60A(G)/TMPF10N60A(G)
1.20 1.15 1.10
V =0V GS
I = 250 μA
D
1.05
1.00
0.95
0.90
0.85
0.80 -80
-40
0 40 80
Junction Temperature,T [oC] J
120
160
Drain-Source On-Resistance R , (Normalized)
DS(ON)
3.0
V = 10 V GS
I =5A 2.5 D
2.0
1.5
1.0
0.5
0.0 -80
-40 0 40 80 120
Junction Temperature, T [oC] J
160
Drain Current, I [A] D
12 10
8 6 4 2 0
25
1.5
Gate Threshold Voltage V , (Normalized)
TH
1.0
50 75 100 125
Case Temperature, T [℃] C
0.5
V =V DS GS
I = 250 A
D
0.0
150
-80 -40
0
40 80 120 .