MRF6522-10R1

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF6522–10/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the 960 MHz range. The MRF6522–10R1 has been specifically designed for use in Communications Network (GSM) base stations. The package offers the advantage of SMD. Specified 26 Volts, 960 MHz, Class AB Characteristics Output Power = 10 Watts CW Power Gain = 15 dB Min @ 960 MHz, 10 Watts CW Drain Efficiency = 48% Min @ 960 MHz, 10 Watts CW D Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters S–Parameter Characterization at High Bias Levels Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances In Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. G S MRF6522-10R1 960 MHz, 10 W, 26 V LATERAL N–CHANNEL RF POWER MOSFET CASE 458C–03, STYLE 1 NI–200Z MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.2 mA) V(BR)DSS Zero Gate Voltage Drain Curr...