K2371 Datasheet PDF | NEC





(PDF) K2371 Datasheet PDF

Part Number K2371
Description 2SK2371
Manufacture NEC
Total Page 8 Pages
PDF Download Download K2371 Datasheet PDF

Features: DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2371/2SK2372 SWITCHING N-CHANNEL PO WER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2371/2SK2372 is N-Channel MOS F ield Effect Transistor www.DataSheet4U. com designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) FEATURES • Low On-Resis tance 2SK2367: RDS(ON) = 0.25 Ω (VGS = 13 V, ID = 10 A) 2SK2368: RDS(ON) = 0 .27 Ω (VGS = 13 V, ID = 10 A) • Low Ciss Ciss = 3600 pF TYP. • High Aval anche Capability Ratings 20.0 ± 0.2 6 .0 1.0 15.7 MAX. 3.2 ± 0.2 4 1 23 4. 5 ± 0.2 7.0 4.7 MAX. 1.5 19 MIN. 3. 0 ± 0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (2SK 2371/2SK2372) VDSS 450/500 V Gate to S ource Voltage VGSS ±30 V Drain Cur rent (DC) ID(DC) ±25 A Drain Curre nt (pulse)* ID(pulse) ±100 A Total Power Dissipation (TC = 25 °C) PT1 16 0 W Total Power Dissipation (Ta = 25 C) PT2 3.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 ~ +150 °C Single Avalanche Current** IAS 2.

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K2371 datasheet
DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2371/2SK2372
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor
www.DataSheet4U.com designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
FEATURES
• Low On-Resistance
2SK2367: RDS(ON) = 0.25 (VGS = 13 V, ID = 10 A)
2SK2368: RDS(ON) = 0.27 (VGS = 13 V, ID = 10 A)
• Low Ciss Ciss = 3600 pF TYP.
• High Avalanche Capability Ratings
15.7 MAX. 3.2 ± 0.2
4
1 23
4.7 MAX.
1.5
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (2SK2371/2SK2372) VDSS 450/500 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±25
A
Drain Current (pulse)*
ID(pulse)
±100
A
Total Power Dissipation (TC = 25 °C) PT1 160 W
Total Power Dissipation (Ta = 25 °C) PT2 3.0 W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 ~ +150 °C
Single Avalanche Current**
IAS 25 A
Single Avalanche Energy**
EAS 446 mJ
* PW 10 µs, Duty Cycle 1 %
** Starting Tch = 25 °C, RG = 25 , VGS = 20 V 0
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device is actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
2.2 ± 0.2
5.45
1.0 ± 0.2
5.45
MP-88
0.6 ± 0.1 2.8 ± 0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Drain
Gate
Body
Diode
Source
Document No. TC-2505
(O.D. No. TC-8064
Date Published January 1995 P
Printed in Japan
© 1995

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