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SSP5N60A

Advanced Power MOSFET

Description

Advanced Power MOSFET SSP5N60A FEATURES ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 25 μA (Max.) @ VDS = 600V ! Lower RDS(ON) : 1.81Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Character...

Fairchild Semiconductor

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