1SS106
SILICON SCHOTTKY BARRIER DIODE
for various detector, high speed switching
Features • Detection efficiency is very...
1SS106
SILICON
SCHOTTKY BARRIER DIODE
for various detector, high speed switching
Features Detection efficiency is very good. Small temperature coefficient. High reliability with glass seal.
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Reverse Voltage Average Forward Current Junction Temperature Storage Temperature Range
Max. 0.5
Max. 1.9
Min. 27.5
Black Cathode Band
Black Part No. Black "ST" Brand
XXX
ST
Max. 3.9
Min. 27.5
Glass Case DO-35 Dimensions in mm
Symbol VR IO TJ Tstg
Value 10 30 125
- 55 to + 125
Unit V mA OC OC
Electrical Characteristics at Ta = 25 OC Parameter
Forward Current at VF = 1 V
Reverse Current at VR = 6 V
Capacitance at VR = 1 V, f = 1 MHz
Rectifier Efficiency at Vin = 2 Vrms, f = 40 MHz, RL = 5 KΩ, CL = 20 pF
ESD Capability 1) at C = 200 pF, both forward and reverse direction 1 pulse. 1) Failure criterion: IR ≥ 140 µA at VR = 6 V
Symbol IF IR C η -
Min. 4.5
70 100
Max. 70
1.5 -
Unit mA µA pF % V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/06/2007
...
