INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1662
DESCRIPTION ·High...
INCHANGE Semiconductor
isc Silicon
NPN Darlington Power
Transistor
isc Product Specification
2SD1662
DESCRIPTION ·High DC Current Gain
: hFE= 1000(Min.)@ IC= 15A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min.) ·Low Collector Saturation Voltage
: VCE(sat) = 1.5V(Max.)@ IC= 15A
APPLICATIONS ·Designed for high current switching application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
100 V
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
100 V 5V
IC Collector Current-Continuous
15 A
IB Base Current- Continuous
PC
Collector Power Dissipation @TC=25℃
Tj Junction Temperature
1A 100 W 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
isc website:www.iscsemi.cn
1
INCHANGE Semiconductor
isc Silicon
NPN Darlington Power
Transistor
isc Product Specification
2SD1662
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA, IB= 0
100
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 15A ,IB= 25mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 15A ,IB= 25mA
ICBO Collector Cutoff current
VCB= 100V, IE= 0
1.5 V 2.2 V 100 μA
IEBO Emitter Cutoff Current hFE DC Current Gain
VEB= 5V; IC= 0 IC= 15A; VCE= 3V
1000
10 mA
COB Output Capacitance fT Current-Gain—Bandwidth Product Switching Times
IE= 0;VCB= 10V;ftest= 1.0MHz IC= 1A; VCE= 5V
280 14
pF MHz
ton Turn-On Time tstg Storage Time tf...