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2SJ126 Datasheet, Equivalent, MOSFET Transistor.P-Channel MOSFET Transistor P-Channel MOSFET Transistor |
| Part | 2SJ126 |
|---|---|
| Description | P-Channel MOSFET Transistor |
| Feature | isc P-Channel MOSFET Transistor
2SJ126
DESCRIPTION ·Low Drain-Source ON Resistance ·High Forward Transfer Admittance ·Low Leakage Current ·Enhancement-Mode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High speed switching application ·Switching regulator ,DC-DC converter and Motor
drive application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
-60
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=37℃
-10
A
Ptot
Total Dissipation@TC=25℃
40
W
Tj
Max. Operating. |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2SJ126 |
|---|---|
| Description | P-Channel MOSFET Transistor |
| Feature | isc P-Channel MOSFET Transistor
2SJ126
DESCRIPTION ·Low Drain-Source ON Resistance ·High Forward Transfer Admittance ·Low Leakage Current ·Enhancement-Mode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High speed switching application ·Switching regulator ,DC-DC converter and Motor
drive application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
-60
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=37℃
-10
A
Ptot
Total Dissipation@TC=25℃
40
W
Tj
Max. Operating. |
| Manufacture | Inchange Semiconductor |
| Datasheet |
|
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