2SJ156

isc P-Channel MOSFET Transistor INCHANGE Semiconductor 2SJ156 DESCRIPTION ·Low Drain-Source ON Resisitance ·High Forward Transfer Admittance ·Low Leakage Current ·Enhancement-Mode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·High speed switching application ·Switching regulator ,DC-DC converter and Motor drive application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) -50 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=37℃ -5 A Ptot Total Dissipation@TC=25℃ 30 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.1 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc P-Channel Mosfet Transistor INCHANGE Semiconductor 2SJ156 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -10mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= -1mA RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -3A IGSS Gate Source Leakage Current VGS= -16V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= -50V,VGS= 0 VSD Diode Forward Voltage IF=-56A;VGS= 0 MIN MAX UNIT -50 V -1.0 -5.0 V 0.22 Ω -10 uA -0.1 mA -1 V NOTICE： ISC reserves the rights to ma...