INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK358
DESCRIPTION ·Drain Current –ID...
INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
2SK358
DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 250V(Min) ·Fast Switching Speed
APPLICATIONS ·High speed. ·high voltage Switching applications
DC–DC converter and motor drive applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0)
250 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃ 5 A
Total Dissipation@TC=25℃
40 W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Rth j-a
Thermal Resistance,Junction to Case
1.0
Thermal Resistance,Junction to Ambient 62.5
℃/W ℃/W
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INCHANGE Semiconductor
isc N-Channel Mosfet
Transistor
isc Product Specification
2SK358
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 10mA
VGS(th) Gate Threshold Voltage
VDS= 10VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 3A
IGSS Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS Zero Gate Voltage Drain Current VDS= 250V; VGS= 0
tr Rise time
ton Turn-on time tf Fall time
VGS=10V;ID=3A;RL=50Ω
toff Turn-off time
MIN TYP MAX UNIT
250 V
1.5 3.5 V
0.7 1.0
Ω
±100 nA
1 mA
20 40 ns
30 60 ns
30 60 n...