2SK382

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK382 DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed APPLICATIONS ·High speed switching. ·High Cutoff frequency. ·No secondary breakdown. ·Suitable for switching regulator，DC-DC converter, RF amplifiers，and ultrasonic power oscillators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 500 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 2 A Total Dissipation@TC=25℃ 30 W Max. Operating Junction Temperature 150 ℃ Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 2SK382 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(TH) Gate Threshold Voltage VDS= 10VGS; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 15V; ID= 1A IGSS Gate Source Leakage Current VGS= ±20V; VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=400V; VGS= 0 VSD Diode Forward Voltage IF= 1A; VGS= 0 tr Rise time ton Turn-on time tf Fall time VGS=15V;ID=2A;RL=15Ω toff Turn-off time MIN TYP MAX UNIT 500 V 2.0 5.0 V 2.5 4.0 Ω ±1 uA 1 mA 0.8 V 18 ns 25 ns 25 ns 70 ns isc website：www.iscsemi.cn 2 isc & iscsemi is register...