2SK3874-01R

2SK3874-01R N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Super FAP-G Series Outline Drawings (mm) 200406 Features High speed switching No secondary breakdown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Drain-source voltage VDS 280 VDSX 280 Continuous Drain Current ID 56 Pulsed Drain Current ID(puls] ±224 Gate-Source Voltage VGS ±30 Maximum Avalanche current IAR 56 Non-Repetitive EAS 1039.1 Maximum Avalanche Energy Repetitive EAR 21 Maximum Avalanche Energy Maximum Drain-Source dV/dt dVDS/dt 20 Peak Diode Recovery dV/dt dV/dt 5 Max. Power Dissipation PD 210 3.13 Operating and Storage Tch +150 Temperature range Tstg -55 to +150 Unit V V A A V A mJ Remarks VGS=-30V Note *1 Note *2 mJ Note *3 kV/µs VDS=<280V kV/µs Note *4 W Tc=25°C Ta=25°C °C °C Electrical characteristics (Tc =25°C unless otherwise specified) Equivalent circuit schematic Drain(D) Gate(G) Source(S) Note *1:Tch<= 150°C,Repetitive and Non-repetitive Note *2:StartingTch=25°C,IAS=23A,L=3.37mH, VCC=48V,RG=50Ω EAS limited by maximum channel temperature and Avalanche current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the ‘Transient Thermal impedance’ graph. Note *4:IF=< -ID, -di/dt=...