2SK3876-01R

2SK3876-01R N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Super FAP-G Series Outline Drawings (mm) 200407 Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Ratings Unit Remarks Drain-source voltage VDS 900 V Continuous Drain Current VDSX ID 900 V VGS=-30V 13 A Equivalent circuit schematic Pulsed Drain Current Gate-Source Voltage ID(puls] VGS ±52 A ±30 V Drain(D) Non-Repetitive Note *1 Maximum Avalanche current IAS 13 A Repetitive Maximum Avalanche current IAR 6.5 A Gate(G) Non-Repetitive EAS 1006 mJ Note *2 Source(S) Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage EAR dVDS/dt dV/dt PD Tch 17.0 40 5 170 3.13 +150 mJ Note *3 kV/µs VDS =< 900V kV/µs Note *4 W Tc=25°C Ta=25°C °C Note *1:Tch<= 150°C Note *2:StartingTch=25°C,IAS=5.2A,L=67.5mH, VCC=100V,RG=50Ω EAS limited by maximum channel temperature and Avalanche current. See to the ‘Avalanche Energy’ graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. Temperature range Tstg -55 to +150 °C See to the ‘Transient Thermal impedance’ Isolation Voltage VISO 2 kVrms t=60sec f=60Hz graph. Note *4:IF=< ...