Document
2SK3990-01L,S,SJ FUJI POWER MOSFET
Super FAP-G Series
200511
N-CHANNEL SILICON POWER MOSFET
Features High speed switching No secondary breadown Avalanche-proof
Low on-resistance Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Outline Drawings [mm]
See to P4
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage
Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive
Symbol VDS VDSX ID ID(puls] VGS IAR
Ratings 600 600 3.0 ±12.0 ±30 3.0
Unit Remarks V V VGS=-30V A A V A Note *1
Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Maximum power dissipation
Operating and storage
EAS
EAR dVDS/dt dV/dt PD
Tch
237.3
6.0 20
5 60
2.02 +150
mJ Note *2
mJ Note *3 kV/μs VDS <=600V kV/μs Note *4 W Tc=25°C W Ta=25°C °C
temperature range
Tstg -55 to +150 °C
Note *1 Tch<=150°C Note *2 Starting Tch=25°C, IAS=1.2A, L=302mH, VCC=60V, RG=50Ω
EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note *3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. Note *4 IF=< -ID, -di/dt=50A/μs, Vcc<= BVDSS, Tch =<150°C
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltage Gate threshold voltage
Symbol BVDSS VGS(th)
Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton
Turn-off time toff
Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Thermalcharacteristics
Item
Thermal resistance
http://www.fujielectric.co.jp/fdt/scd/
IDSS
IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VSD trr Qrr
Symbol Rth(ch-c) Rth(ch-a)
Test Conditions ID= 250μA VGS=0V ID= 250μA VDS=VGS
VDS=600V VGS=0V
VDS=480V VGS=0V VGS=±30V VDS=0V ID=1.5A VGS=10V
ID=1.5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=1.5A
VGS=10V
RGS=10 Ω
Tch=25°C Tch=125°C
VCC=250V ID=3.0A VGS=10V IF=3.0A VGS=0V Tch=25°C IF=3.0A VGS=0V -di/dt=100A/μs Tch=25°C
Test Conditions channel to case
channel to ambient
Min. 600 3.0
1.5
Typ.
2.64 3.0 330 50 2.5 11 5.0 23 10 13 5.5 2.8 1.00 0.5 2.3
Max. Units
V 5.0 V 25 μA 250 100 nA 3.3 Ω
S 500 pF
75 5.0
18 ns 7.5
35 15 20 nC
8.5 4.2 1.50 V
μs μC
Min. Typ.
Max. Units 2.083 °C/W
62.0 °C/W
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2SK3990-01L,S,SJ (600V/3.0A/3.3Ω)
Characteristics
FUJI POWER MOSFET
2
2SK3990-01L,S,SJ (600V/3.0A/3.3Ω)
FUJI POWER MOSFET
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2SK3990-01L,S,SJ (600V/3.0A/3.3Ω)
FUJI POWER MOSFET
Outline Drawings [mm]
T-pack(L)
T-pack(S)
T-pack(SJ) [D2-pack]
http://www.fujielectric.co.jp/fdt/scd/
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