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2SK3990-01SJ Dataheets PDF



Part Number 2SK3990-01SJ
Manufacturers Fuji
Logo Fuji
Description N-CHANNEL SILICON POWER MOSFET
Datasheet 2SK3990-01SJ Datasheet2SK3990-01SJ Datasheet (PDF)

2SK3990-01L,S,SJ FUJI POWER MOSFET Super FAP-G Series 200511 N-CHANNEL SILICON POWER MOSFET Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Outline Drawings [mm] See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-so.

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2SK3990-01L,S,SJ FUJI POWER MOSFET Super FAP-G Series 200511 N-CHANNEL SILICON POWER MOSFET Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Outline Drawings [mm] See to P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Symbol VDS VDSX ID ID(puls] VGS IAR Ratings 600 600 3.0 ±12.0 ±30 3.0 Unit Remarks V V VGS=-30V A A V A Note *1 Non-repetitive Maximum avalanche energy Repetitive Maximum avalanche energy Maximum drain-source dV/dt Peak diode recovery dV/dt Maximum power dissipation Operating and storage EAS EAR dVDS/dt dV/dt PD Tch 237.3 6.0 20 5 60 2.02 +150 mJ Note *2 mJ Note *3 kV/μs VDS <=600V kV/μs Note *4 W Tc=25°C W Ta=25°C °C temperature range Tstg -55 to +150 °C Note *1 Tch<=150°C Note *2 Starting Tch=25°C, IAS=1.2A, L=302mH, VCC=60V, RG=50Ω EAS limited by maximum channel temperrature and avalanche current. See to ‘Avalanche Energy’ graph. Note *3 Repetitve rating : Pulse width limited by maximum channel temperature. See to ‘Transient Thermal impedance’ graph. Note *4 IF=< -ID, -di/dt=50A/μs, Vcc<= BVDSS, Tch =<150°C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Symbol BVDSS VGS(th) Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Thermalcharacteristics Item Thermal resistance http://www.fujielectric.co.jp/fdt/scd/ IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VSD trr Qrr Symbol Rth(ch-c) Rth(ch-a) Test Conditions ID= 250μA VGS=0V ID= 250μA VDS=VGS VDS=600V VGS=0V VDS=480V VGS=0V VGS=±30V VDS=0V ID=1.5A VGS=10V ID=1.5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=1.5A VGS=10V RGS=10 Ω Tch=25°C Tch=125°C VCC=250V ID=3.0A VGS=10V IF=3.0A VGS=0V Tch=25°C IF=3.0A VGS=0V -di/dt=100A/μs Tch=25°C Test Conditions channel to case channel to ambient Min. 600 3.0 1.5 Typ. 2.64 3.0 330 50 2.5 11 5.0 23 10 13 5.5 2.8 1.00 0.5 2.3 Max. Units V 5.0 V 25 μA 250 100 nA 3.3 Ω S 500 pF 75 5.0 18 ns 7.5 35 15 20 nC 8.5 4.2 1.50 V μs μC Min. Typ. Max. Units 2.083 °C/W 62.0 °C/W 1 2SK3990-01L,S,SJ (600V/3.0A/3.3Ω) Characteristics FUJI POWER MOSFET 2 2SK3990-01L,S,SJ (600V/3.0A/3.3Ω) FUJI POWER MOSFET 3 2SK3990-01L,S,SJ (600V/3.0A/3.3Ω) FUJI POWER MOSFET Outline Drawings [mm] T-pack(L) T-pack(S) T-pack(SJ) [D2-pack] http://www.fujielectric.co.jp/fdt/scd/ 4 .


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