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2SK400 Datasheet, Equivalent, MOSFET Transistor.N-Channel MOSFET Transistor N-Channel MOSFET Transistor |
　
　
　
| Part | 2SK400 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor DESCRIP TION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Mi n) ·Fast Switching Speed ·100% avalan che tested ·Minimum Lot-to-Lot variati ons for robust device performance and r eliable operation APPLICATIONS ·low o n–resistance ·High speed switching  ·Low drive current ·No secondary break down ·Suitable for switchingregulator, DC–DC convertor ABSOLUTE MAXIMUM RA TINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0 ) 200 V VGS Gate-Source Voltage ± 20 V ID Drain Current-continuous@ TC =25℃ 8 A Ptot Total Dissipation . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
| Part | 2SK400 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | isc N-Channel MOSFET Transistor DESCRIP TION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Mi n) ·Fast Switching Speed ·100% avalan che tested ·Minimum Lot-to-Lot variati ons for robust device performance and r eliable operation APPLICATIONS ·low o n–resistance ·High speed switching  ·Low drive current ·No secondary break down ·Suitable for switchingregulator, DC–DC convertor ABSOLUTE MAXIMUM RA TINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0 ) 200 V VGS Gate-Source Voltage ± 20 V ID Drain Current-continuous@ TC =25℃ 8 A Ptot Total Dissipation . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
　
　
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